QFI Thermal Emissions Microscopy

Sage Analytical Labs is equipped with a QFI Thermal Emissions Microscopy system capable of isolating multiple fail types to a high degree of accuracy.

Our system is equipped with frontside and backside imaging capabilities for all techniques.

With the IR hotspot detection system and temperature mapping, it is possible to determine points of increased localized heating due to circuit anomalies and improper operation.

This technique may also be implemented to show areas of power dissipation on a normal die, and help with improving future design layouts.

For more subtle leakages and shorts, stimuli may be applied to the die to excite a location of failure, which is then mapped to a precise location of fail. These techniques known as Externally Induced Voltage Alteration (XIVA), Thermally Induced Voltage Alteration (TIVA), and Optical Beam Induced Resistance CHange (OBIRCH) are the go-to in the industry for localizing failures.

By rastering a laser at an IR wavelength, local heating is introduced to a small location on a die, while constantly monitoring the current being applied. When a delta in this current is detected, a corresponding point is mapped onto an optical image, giving an exact location where this external stimulus has affected the device operation.

Being able to use these techniques on either side of a die permits us to get maximum penetration of laser energy, and therefore, maximum response, whether the issue resides in the higher metal regions, or closer to the device level.